www.goodark.com page 1 of 6 rev.1.0 ssf 1 0 06 a 100v n-channel mosfet absolute maximum ratings parameter max. units i d @t c =25? c continuous drain current,vgs@10v 200 i d @t c =100?c continuous drain current,vgs@10v 130 i dm pulsed drain current 800 a power dissipation 272 w p d @t c =25?c linear derating factor 1.5 w/? c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 960 mj e ar repetitive avalanche energy tbd mj dv/dt peak diode recovery voltage 31 v/ns t j t stg operating junction and storage temperature range C55 to +150 ?c thermal resistance parameter min. typ. max. units r jc junction-to-case 0.46 r ja junction-to-ambient 62 ?c/w electrical characteristics @t j =25 ?c (unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 100 v v gs =0v,i d =250a r ds(on) static drain-to-source on-resistance 4.7 5.5 m v gs =10v,i d =30a v gs(th) gate threshold voltage 2.0 4.0 v v ds =v gs ,i d =250a i dss drain-to-source leakage current 2 a v ds =100v,v gs =0v ssf1006a top view (d2pak) id =200a bv=100v r ds(on) =4.7 m typ. features ? advanced trench process technology ? avalanche energy, 100% test ? fully characterized avalanche voltage and current ? lead free product description the ssf1006a is a new generation of high voltage and low current nCchannel enhancement mode trench power mosfet. this new technology increases the device reliability and electrical parameter repeatability. ssf1006a is assembled in high reliability and qualified assembly house. applications ? power switching application
www.goodark.com page 2 of 6 rev.1.0 ssf 1 0 06 a 100v n-channel mosfet 10 v ds =100v, v gs =0v,t j =150?c gate-to-source forward leakage 100 v gs =20v i gss gate-to-source reverse leakage -100 na v gs =-20v q g total gate charge 108 q gs gate-to-source charge 24 q gd gate-to-drain("miller") charge 37 nc i d =30a,v gs =10v v dd =30v t d(on) turn-on delay time 18.2 t r rise time 15.6 t d(off) turn-off delay time 70.5 t f fall time 13.8 ns v dd =3 0v i d =2a ,r l =15 r g =2.5 v gs =10v c iss input capacitance 3150 c oss output capacitance 350 c rss reverse transfer capacitance 240 pf v gs =0v v ds =25v f=1.0mhz source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current (body diode) 160 i sm pulsed source current (body diode) 520 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.3 v t j =25?c,i s =60a,v gs =0v t rr reverse recovery time 57 ns q rr reverse recovery charge 107 c t j =25?c,i f =75a di/dt=100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + ld) notes: repetitive rating; pulse width limited by max junction temperature. test condition: l =0.3mh, vdd = 50v,id=80a pulse width300s, duty cycle1.5% ; rg = 25?? starting tj = 25c
www.goodark.com page 3 of 6 rev.1.0 ssf 1 0 06 a 100v n-channel mosfet eas test circuit gate charge test circuit switch time test circuit switch waveform
www.goodark.com page 4 of 6 rev.1.0 ssf 1 0 06 a 100v n-channel mosfet transfer characteristic capacitance on resistance vs. junction temperature breakdown voltage vs. junction temperature
www.goodark.com page 5 of 6 rev.1.0 ssf 1 0 06 a 100v n-channel mosfet gate charge source-drain diode forward voltage safe operation area max drain current vs. junction transient thermal impedance curve
www.goodark.com page 6 of 6 rev.1.0 ssf 1 0 06 a 100v n-channel mosfet d2pak mechanical data
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